Ad-774 126 Molecular Beam Epitaxy of Ii-vi Compound Waveguides
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Molecular Beam Epitaxy of Ii-vi Compound Waveguides
IConllnv on r...r.. •Idm II n.c....ry and Idtnllly by block numb.r) Thin films ot ZnSe, ZnTe, Zn(SeTe), Cd(SeTe) and CdTe were grown on CdS, CdSe, CaF,, and sapphire substrates by evaporation of the elements under ultra-high vacuum. Substrate chemical polishing techniques were developed:. Elemental and compound evaporation and deposition rates were measured by mass spectrometer, film thickness,...
متن کاملChapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors
This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...
متن کاملGrowth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector
A Bragg reflector consisting of a 25-period MnZnSSe/ZnSSE Bragg stack is reported. The II–VI semiconductor structure was grown by molecular beam epitaxy on a GaAs ~100! epilayer. Structural characterization of the Bragg reflector was performed with double crystal x-ray diffraction and transmission electron microscopy. These studies indicated that the epitaxial II–VI structure, whose total thick...
متن کاملHigh-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates
High-brightness blue and green light-emitting diodes ~LEDs! based on II–VI double heterostructures ~DHs! have been successfully grown by molecular-beam epitaxy ~MBE! on ~100! ZnSe substrates. These LED structures consist of a 500–1000 Å thick active region of undoped blue-emitting Zn0.9Cd0.1Se/ZnSe multiple quantum wells or a green-emitting ZnTe0.1Se0.9 single quantum well sandwiched between a ...
متن کاملMBE growth of II–VI materials on GaSb substrates for photovoltaic applications
The II–VI materials lattice matched to GaSb substrates are desirable for ultrahigh-efficiency multijunction solar cells. This paper reports the growth of ZnTe and ZnCdTe/ZnTe quantum wells on undoped GaSb (10 0) substrates using molecular beam epitaxy. During growth, in situ reflection highenergy electron diffraction shows fast and smooth transition from GaSb surface to ZnTe surface. Postgrowth...
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